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دانلود رایکان مقاله انگلیسی ISI با موضوع حفره های شیب دار کم عمق با درپوش (مرز) متحرک

عنوان فارسی مقاله:

شبیه سازی عددی همرفت مختلط آرام دو – پخشی در حفره های شیب دار کم عمق با درپوش (مرز) متحرک

عنوان انگلیسی مقاله:

Numerical simulation of double diffusive laminar mixed convection in shallow inclined cavities with moving lid

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بخشی از مقاله انگلیسی :

6. Conclusions 

The current investigation is concerned with the numerical simulation of double diffusive flow in a two dimensional shallow inclined driven cavity with the top lid moves in both upward and downward directions. The Patankar–Spalding technique was used to solve the set of the governing equations. The investigation was carried out for a broad spectrum of relevant dimensionless groups to explore their effects on the overall flow patterns and transport rates. The employed domains of these dimensionless groups were as follows: 0.1 6 Le 6 10 and 10 6 N 6 10. The results show that the flow field is characterized by a primary circulating bubble with its place depends on the direction of the moving lid. Furthermore, high Le values significantly improve the mass transfer rate, whereas Le is found to have insignificant impact on the heat transfer rate. Also, the increase in the absolute value of the buoyancy ratio number N was found to enhance the estimated Nusselt number and the Sherwood number for both cases of lid movements. Next, the tilting effect on heat and species transfer is studied, the increment in the inclination angle leads to increase both values of the Nusselt and Sherwood numbers mildly for the upward movement case. On the contrary, in the downward movement case they decrease at first till c = 10 afterwards they start to increase as the angle increases. It is noticed that the values of the average Nusselt or Sherwood numbers in the first case are higher than of those of the second case. The results of the present work may play an important role on enhancing the performance of many engineering applications such as crystal growth which is important in fabrication of infrared detectors, memory devices, and integrated circuits.